cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 1/9 mtb4d0n03av8 cystek product specification n-channel enhancement mode power mosfet mtb4d0n03av8 features ? single drive requirement ? low on-resistance ? fast switching characteristic ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTB4D0N03AV8-0-T6-G dfn3 3 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel dfn3 3 mtb4d0n03av8 g gate d drain s source bv dss 30v i d @ v gs =10v, t a =25 c 14.7a i d @ v gs =10v, t c =25 c 44a v gs =10v, i d =19a 3.8m r dson(typ) v gs =4.5v, i d =17.5a 5.6m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pcs / tape & reel,13? reel product rank, zero for no rank products product name pin 1
cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 2/9 mtb4d0n03av8 cystek product specification absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ v gs =10v, t c =25 c(silicon limit) 60 continuous drain current @ v gs =10v, t c =25 c(package limit) 44 continuous drain current @ v gs =10v, t c =100 c 37.9 continuous drain current @ v gs =10v, t a =25 c 14.7 continuous drain current @ v gs =10v, t a =70 c i d 11.8 pulsed drain current i dm 240 *1 single pulse avalanche current @ l=0.1mh i as 40 a avalanche energy @ l=0.1mh, i d =40a, v dd =25v e as 80 *3 repetitive avalanche energy @ l=0.05mh e ar 4.2 mj t c =25 41.7 t c =100 p d 16.7 t a =25 2.5 *2 total power dissipation t a =70 p dsm 1.6 *2 w operating junction and storage temperature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 3 thermal resistance, junction-to-ambient, max r ja 50 *2 c/w note : 1. pulse width limited by maximum junction temperature. 2. surface mounted on a 1 in2 pad of 2oz copper. in practice r th,j-a will be determined by customer?s pcb characteristics. 125 c/w when mounted on a minimum pad of 2 oz. copper. 3. 100% tested by conditions of l=0.5mh, i as =15a, v gs =10v, v dd =15v, rated 30v characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0v, i d =250 a v gs(th) 1 - 2.5 v v ds = v gs , i d =250 a g fs *1 - 15.2 - s v ds =10v, i d =7a i gss - - 100 na v gs = 20v, v ds =0v - - 1 v ds =24v, v gs =0v i dss - - 10 a v ds =24v, v gs =0v, tj=85 c - 3.8 4.8 v gs =10v, i d =19a r ds(on) *1 - 5.6 7.5 m v gs =4.5v, i d =17.5a
cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 3/9 mtb4d0n03av8 cystek product specification dynamic ciss - 1538 2000 coss - 287 375 crss - 212 300 pf v ds =15v, v gs =0v, f=1mhz qg (v gs =10v) *1, 2 - 33.4 47 qg (v gs =4.5v) *1, 2 - 17.5 25 qgs *1, 2 - 4.8 - qgd *1, 2 - 8.6 - nc v ds =15v, v gs =10v, i d =19a t d(on) *1, 2 - 13.8 22 tr *1, 2 - 19.4 29 t d(off) *1, 2 - 47.2 65 t f *1, 2 - 10.6 22 ns v ds =15v, i d =19a, v gs =10v, r gs =1 rg 0.1 1.6 5 f=1mhz source-drain diode i s *1 - - 30 i sm *3 - - 120 a v sd *1 - 0.82 1.2 v i s =18a, v gs =0v trr - 14 23 ns qrr - 7 12 nc i f =18a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 4/9 mtb4d0n03av8 cystek product specification typical characteristics typical output characteristics 0 20 40 60 80 100 120 140 012345 vds, drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v,5v v gs =2.5v 3.5v 3v 4v brekdown voltage vs junction temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 048121620 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 5 10 15 20 25 30 0246810 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =19a drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =19a r dson @ tj=25c : 3.8 m typ v gs =4.5v, i d =17.5a r dson @ tj=25c : 5.6 m typ
cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 5/9 mtb4d0n03av8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10v v ds =15v gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 36 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =19a v ds =15v maximum safe operating area 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =50c/w single pulse dc 100ms r dson limited 100 s 1ms 1s 10ms maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 16 18 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =50c/w
cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 6/9 mtb4d0n03av8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 20 40 60 80 100 120 140 0123456 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v single pulse power rating, junction to ambient (note on page 2) 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50 c/w
cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 7/9 mtb4d0n03av8 cystek product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 8/9 mtb4d0n03av8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c092v8 issued date : 2018.05.02 revised date : page no. : 9/9 mtb4d0n03av8 cystek product specification dfn3 3 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.70 0.80 0.028 0.031 e1 3.00 3.20 0.118 0.126 b 0.25 0.35 0.010 0.014 e2 2.39 2.59 0.094 0.102 c 0.10 0.25 0.004 0.010 e 0.65 bsc 0.026 bsc d 3.25 3.45 0.128 0.136 h 0.30 0.50 0.012 0.020 d1 3.00 3.20 0.118 0.126 l 0.30 0.50 0.012 0.020 d2 1.48 1.68 0.058 0.066 l1 0.13 typ 0.005 typ d3 0.13 typ 0.005 typ 8 12 8 12 e 3.20 3.40 0.126 0.134 m - 0.15 - 0.006 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead dfn3 3 plastic package cystek package code: v8 date code s s s g d d d d b4d0 n03a
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